1. Product Name: SC-TCB2235AC
2. Features:
(1) High radiant flux.
(2) Long operation life.
(3) Lambertian radiation.
(4) Lighting applications.
3. Physical Characteristics:
(1) Size:
Chip size: 560±25 μm × 890±25 μm
Chip thickness: 200±10 μm
P bonding pad: 70±10 μm
N bonding pad: 70±10 μm
(2) Metallization:
P electrode: Au alloy
N electrode: Au alloy
(3) Structure:
Refer to the drawing.
4. Electro-Optical Characteristics (Ta=25oC):
Parameter | Symbol | Condition | Min. | Typ. | Max. | Unit |
Forward Voltage | VF1 | IF = 150 mA | 3.1 | 3.4 | V | |
VF3 | IF = 10μA | 2.0 | - | - | V | |
Reverse Current | IR | VR = 10 V | - | - | 1 | μA |
Dominant Wavelength | λd | IF = 150 mA | 445 | - | 460 | nm |
Spectra Half Width | λH | IF = 150 mA | - | 18 | - | nm |
Light Output Power | PO | IF = 150 mA | 200 | - | - | mW |
AntiElectro-Static-Discharge | ESD | HBM | 2 | KV |
Note:
(1) ESD protection during chip handling is strongly recommended.
(2) All measurements are done on chip form with SINO CRYSTAL’s standard testing equipment.
(3) Dominant wavelength measurement allows a tolerance of ±1nm.
(4) Radiant flux measurement allows a tolerance of ±5%.
(5) Customer’s special requirements are also welcome.
5. Absolute Maximum Ratings:
Parameter | Symbol | Condition | Rating | Unit |
Forward DC Current | IF | Ta = 25oC | ≤ 240 | mA |
Reverse Voltage | VR | Ta = 25oC | ≤10 | V |
Junction Temperature | Tj | - | ≤120 | oC |
Storage Temperature | Tstg | Chip | -40～85 | oC |
Chip-on-tape / Storage | 5～35 | oC | ||
Chip-on-tape / Transportation | -20～65 | oC | ||
Temperature during Packaging | - | - | 260 (<5sec) | oC |
